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 Midium Power Transistors (-80V / -0.7A)
2SAR514R
Features 1) Low saturation voltage, typically V CE (sat) = -0.4V (Max.) (I C / I B= -300mA / -15mA) 2) High speed switching
(3)
Dimensions (Unit : mm)
TSMT3
Structure PNP Silicon epitaxial planar transistor Applications Driver Packaging specifications Type Package TSMT3 Code TL Basic ordering unit (pieces) 3000
(1)
(2)
(1) Base (2) Emitter (3) Collector
Abbreviated symbol : MD
Inner circuit
(3) (2)
(1)
Absolute maximum ratings (Ta = 25C) Parameter Symbol Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature
*1 Pw=10ms, Single Pulse *2 Mounted on a recommended land. *3 Mounted on a 40 x 40 x 0.7[mm3] ceramic substrate.
Limits -80 -80
Unit V V V A A W W C C
VCBO VCEO VEBO
(1) Base (2) Emitter (3) Collector
(2) (3)
DC Pulsed
-6 -0.7 IC ICP *1 -1.4 PD *2 0.5 *3 PD 1.0 150 Tj Tstg -55 to 150
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1/5
2010.06 - Rev.A
2SAR514R
Electrical characteristic (Ta = 25C) Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter staturation voltage DC current gain Transition frequency Collector output capacitance Turn-on time Storage time Fall time * See switching time test circuit Symbol BVCEO BVCBO BVEBO ICBO IEBO VCE(sat) hFE fT Cob ton * tstg * tf * Min. -80 -80 -6 120 Typ. -200 380 10 50 350 50 Max. -1 -1 -400 390 Unit V V V A A Conditions IC= -1mA IC= -100A IE= -100A VCB= -80V VEB= -4V
Data Sheet
mV IC= -300mA, I B= -15mA VCE= -3V, I C= -100mA VCE= -10V MHz IE=200mA, f=100MHz pF ns ns ns VCB= -10V, I E=0A f=1MHz IC= -0.35A, I B1= -35mA, IB2=35mA, VCC~ -10V _
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2/5
2010.06 - Rev.A
2SAR514R
Electrical characteristic curves (Ta = 25C)
Data Sheet
Fig.1 Typical Output Characteristics -0.30 -4.0mA -5.0mA -0.25 COLLECTOR CURRENT :IC[A] -3.0mA -1.5mA -2.0mA 1000
Fig.2 DC Current Gain vs. Collector Current()
Ta=25
-1.0mA
-0.15
DC CURRENT GAIN :hFE
-0.20
100
VCE=-5V -3V
-0.10
-0.5mA
-0.05
0.00 0.0 -0.5 -1.0 -1.5 -2.0
10 -1 -10 -100 -1000
COLECTOR TO EMITTER VOLTAGE:VCE[V]
COLLECTOR CURRENT :IC[mA] Fig.4 Collector-Emitter Saturation Voltage vs. Collector Current() -1 COLLECTOR SATURATION VOLTA AGE :VCE(sat)[V] Ta=25
Fig.3 DC Current Gain vs. Collector Current() 1000 VCE=-3V
DC CURRENT GAIN :hFE
100 Ta=125 75 25 -40
-0.1
IC/IB=50 20 10
10 -1 -10 -100 -1000
-0.01 -1 -10 -100 -1000
COLLECTOR CURRENT :IC[mA]
COLLECTOR CURRENT :IC[mA]
Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current() -1 COLLECTOR SATURATION VOLTAGE :VCE(sat)[V]
Fig.6 Ground Emitter Propagation Characteristics -1000 VCE=-3V COLLECTOR CURRENT :IC[mA]
-100
Ta=125 75 25 -40
-0.1
Ta=125 75 25 -40 IC/IB=20 -0.01 -1 -10 -100 -1000
-10
-1 0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 BASE TO EMITTER VOLTAGE : VBE[V] -1.4
COLLECTOR CURRENT : IC[mA]
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3/5
2010.06 - Rev.A
2SAR514R
Data Sheet
Fig.7 Emitter input capacitance vs. Emitter-Base Voltage Collector output capacitance vs.Collector-Base Voltage 1000 COLLECTOR OUTPUT CAPACITANCE : Cob(pF) MITTER INPUT CAPACITANCE : Cib(pF) 1000 Ta=25 f=1MHz IE=0A IC=0A
Fig8. Gain Bandwidth Product vs. Emitter Current
Ta=25 VCE=-10V
100 Cib
TRANSITION FREQUENCY :fT[MHz]
100
10 Cob
1 -0.1 -1 -10 COLLECTOR - BASE VOLTAGE : VCB (V) EMITTER - BASE VOLTAGE : VEB (V) -100
10 10 100 EMITTER CURRENT :IE[A] 1000
Fig9. Safe operating area
1ms 10ms COLLECTOR CURRENT : IC (A) -1 100ms
-0.1
-0.01
DC Mounted on a recommended land) Ta=25 Single non repetitive pulse
-0.001 -0.1 -1 -10 COLLECTOR TO EMITTER VOLTAGE :VCE(V) -100
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4/5
2010.06 - Rev.A
2SAR514R
Switching time test circuit RL=27 VIN Pw IB1 IC
Data Sheet
_ VCC ~ -10V
IB2 Pw _ 50s ~ DUTY CYCLE1%
IB2 BASE CURENT WAVEFORM
IB1
ton 90% COLLECTOR CURRENT WAVEFORM
tstg
tf
IC
10%
www.rohm.com (c)2010 ROHM Co., Ltd. All rights reserved.
5/5
2010.06 - Rev.A
Notice
Notes
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R1010A


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